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Security Refresh: Protecting Phase-Change Memory against Malicious Wear Out
January/February 2011 (vol. 31 no. 1)
pp. 119-127
Nak Hee Seong, Georgia Institute of Technology
Dong Hyuk Woo, Intel Labs
Hsien-Hsin S. Lee, Georgia Institute of Technology

As dynamic RAM scaling approaches its physical limit, phase-change memory is the most mature and well-studied option for potential DRAM replacement. However, malicious wear-out attacks can exploit PCM's limited write endurance. To address this, a low-cost wear-leveling scheme can dynamically randomize the data addresses across the entire address space and obfuscate their actual locations from users and system software.

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Index Terms:
phase change memory, security, wear leveling, dynamic address remapping
Citation:
Nak Hee Seong, Dong Hyuk Woo, Hsien-Hsin S. Lee, "Security Refresh: Protecting Phase-Change Memory against Malicious Wear Out," IEEE Micro, vol. 31, no. 1, pp. 119-127, Jan.-Feb. 2011, doi:10.1109/MM.2010.101
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