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Issue No.06 - November/December (2008 vol.28)
pp: 37-46
Jaume Abella , Intel Barcelona Research Center
Xavier Vera , Intel Barcelona Research Center
Osman S. Unsal , Intel Barcelona Research Center
Oguz Ergin , Intel Barcelona Research Center
Antonio González , Intel Barcelona Research Center and Universitat Politècnica de Catalunya
James W. Tschanz , Circuit Research Labs, Intel Corporation
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids-some of a chip's most vulnerable wires. Refueling exploits EM's self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire's lifetime while reducing the chip area devoted to wires.
reliability, testing, fault-tolerance, design styles, physical structures, advanced technologies, electromigration
Jaume Abella, Xavier Vera, Osman S. Unsal, Oguz Ergin, Antonio González, James W. Tschanz, "Refueling: Preventing Wire Degradation due to Electromigration", IEEE Micro, vol.28, no. 6, pp. 37-46, November/December 2008, doi:10.1109/MM.2008.92
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7. M. Powell et al., "Gated-Vdd: A Circuit Technique to Reduce Leakage in Deep-Submicron Cache Memories," Proc. Int'l Symp. Low Power Electronics and Design (ISLPED 00), ACM Press, 2000, pp. 90-95.
8. J. Abella and X. Vera, "Electromigration for Microarchitects," to appear in ACM Computing Surveys.
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