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Refueling: Preventing Wire Degradation due to Electromigration
November/December 2008 (vol. 28 no. 6)
pp. 37-46
Jaume Abella, Intel Barcelona Research Center
Xavier Vera, Intel Barcelona Research Center
Osman S. Unsal, Intel Barcelona Research Center
Oguz Ergin, Intel Barcelona Research Center
Antonio González, Intel Barcelona Research Center and Universitat Politècnica de Catalunya
James W. Tschanz, Circuit Research Labs, Intel Corporation
Electromigration is a major source of wire and via failure. Refueling undoes EM for bidirectional wires and power/ground grids-some of a chip's most vulnerable wires. Refueling exploits EM's self-healing effect by balancing the amount of current flowing in both directions of a wire. It can significantly extend a wire's lifetime while reducing the chip area devoted to wires.

1. J. Srinivasan et al., "The Impact of Technology Scaling on Lifetime Reliability," Proc. Int'l Conf. Dependable Systems and Networks (DSN 04), IEEE CS Press, 2004, pp. 177-186.
2. J.R. Black, "Electromigration Failure Modes in Aluminum Metallization for Semiconductor Devices," Proc. IEEE, vol. 57, no. 9, 1969, pp. 1587-1594.
3. F.M. D'Heurle, "Electromigration and Failure in Electronics: An Introduction," Proc. IEEE, vol. 59, no. 10, 1971, pp. 1409-1418.
4. I.A. Blech and E.S. Meieran, "Direct Transmission Electron Microscope Observation of Electrotransport in Aluminum Thin Films," Applied Physics Letters, vol. 11, no. 8, Oct. 1967, p. 147.
5. B.K. Liew, N.W. Cheung, and C. Hu, "Projecting Interconnect Electromigration Lifetime for Arbitrary Current Waveforms," IEEE Trans. Electron Devices, vol. 37, no. 5, May 1990, pp. 1343-1351.
6. J. Choi et al., "Modeling of Realistic On-Chip Power Grid Using the FDTD Method," Proc. IEEE Int'l Symp. Electromagnetic Compatibility (EMC 02), IEEE Press, 2002, pp. 238-243.
7. M. Powell et al., "Gated-Vdd: A Circuit Technique to Reduce Leakage in Deep-Submicron Cache Memories," Proc. Int'l Symp. Low Power Electronics and Design (ISLPED 00), ACM Press, 2000, pp. 90-95.
8. J. Abella and X. Vera, "Electromigration for Microarchitects," to appear in ACM Computing Surveys.
1. X. Xuan, "Analysis and Design of Reliable Mixed-Signal CMOS Circuits," PhD thesis, Georgia Inst. of Technology, Dept. of Electrical and Computer Engineering, 2004.
2. A. Dasgupta and R. Karri, "Electromigration Reliability Enhancement Via Bus Activity Distribution," Proc. 33rd Ann. Conf. Design Automation (DAC 96), ACM Press, 1996, pp. 353-356.
3. J. Lienig and G. Jerke, "Embedded Tutorial: Electromigration-Aware Physical Design of Integrated Circuits," Proc. 18th Int'l Conf. VLSI Design (VLSID 05), IEEE Press, 2005, pp. 77-82.
4. J. Tao et al., "Modeling and Characterization of Electromigration Failures under Bidirectional Current Stress," IEEE Trans. Electron Devices, vol. 43, no. 5, May 1996, pp. 800-808.
5. J. Abella and X. Vera, "Electromigration for Microarchitects to appear in ACM Computing Surveys."

Index Terms:
reliability, testing, fault-tolerance, design styles, physical structures, advanced technologies, electromigration
Citation:
Jaume Abella, Xavier Vera, Osman S. Unsal, Oguz Ergin, Antonio González, James W. Tschanz, "Refueling: Preventing Wire Degradation due to Electromigration," IEEE Micro, vol. 28, no. 6, pp. 37-46, Nov.-Dec. 2008, doi:10.1109/MM.2008.92
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