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Issue No.03 - June (1994 vol.14)
pp: 68-77
ABSTRACT
<p>Certain limits influence MOSFET technology in low-voltage applications. When we reduce the power supply voltage in modern short-channel devices, both active power dissipation and hot carrier reliability improve more than Linearly. However, strong off-state power consumption requirements and increasing numbers of FETs in each integrated circuit, combined with the physical limit to the subthreshold slope, force designers to choose between high performance and high density.</p>
CITATION
Daniel P. Foty, Edward J. Nowak, "MOSFET Technology for Low-Voltage/Low-Power Applications", IEEE Micro, vol.14, no. 3, pp. 68-77, June 1994, doi:10.1109/40.285230
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