The Community for Technology Leaders
RSS Icon
Subscribe
Issue No.01 - January/February (2011 vol.28)
pp: 64-71
Shyh-Shyuan Sheu , National Central University Industrial Technology Research Institute, Taoyuan Hsinchu
Kuo-Hsing Cheng , National Central University, Taoyuan
Meng-Fan Chang , National Tsing Hua University, Hsinchu
Pei-Chia Chiang , Industrial Technology Research Institute, Hsinchu
Wen-Pin Lin , Industrial Technology Research Institute, Hsinchu
Heng-Yuan Lee , Industrial Technology Research Institute National Tsing Hua University, Hsinchu Hsinchu
Pang-Shiu Chen , MingShin University of Science & Technology, Hsinchu
Yu-Sheng Chen , Industrial Technology Research Institute National Tsing Hua University, Hsinchu Hsinchu
Frederick T. Chen , Industrial Technology Research Institute, Hsinchu
Ming-Jinn Tsai , Industrial Technology Research Institute, Hsinchu
ABSTRACT
<p>Editor's note:</p><p>Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.</p><p align="right">&#x2014;Leland Chang, IBM T.J. Watson Research Center</p>
INDEX TERMS
design and test, resistive RAM, multilevel, fast access speed, nonvolatile memory, RRAM
CITATION
Shyh-Shyuan Sheu, Kuo-Hsing Cheng, Meng-Fan Chang, Pei-Chia Chiang, Wen-Pin Lin, Heng-Yuan Lee, Pang-Shiu Chen, Yu-Sheng Chen, Frederick T. Chen, Ming-Jinn Tsai, "Fast-Write Resistive RAM (RRAM) for Embedded Applications", IEEE Design & Test of Computers, vol.28, no. 1, pp. 64-71, January/February 2011, doi:10.1109/MDT.2010.96
REFERENCES
1. M.-F. Chang et al., "A 0.29V Embedded NAND-ROM in 90nm CMOS for Ultra-Low-Voltage Applications," Proc. IEEE Int'l Solid-State Circuits Conf. (ISSCC 10), IEEE Press, 2010, pp. 266-267.
2. M.-F. Chang and S.-J. Shen, "A Process Variation Tolerant Embedded Split-Gate Flash Memory Using Pre-stable Current Sensing Scheme," IEEE J. Solid-State Circuits, vol. 44, no. 3, 2009, pp. 987-994.
3. H.-Y. Lee et al., "Low Power and High Speed Bipolar Switching with a Thin Reactive Ti Buffer Layer in Robust HfO2 Base RRAM," Proc. Int'l Electron Devices Meeting (IEDM 08), IEEE Press, 2008, pp. 297-300.
6 ms
(Ver 2.0)

Marketing Automation Platform Marketing Automation Tool