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Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing
January/February 2011 (vol. 28 no. 1)
pp. 52-63
Takayuki Kawahara, Hitachi Ltd., Kokubunji

Editor's note:

Nonvolatile embedded memories may open the door to new computing paradigms based on "normally-off and instant-on" operation. This article covers recent trends of spin-transfer-torque RAM technology, an emerging class of nonvolatile memory, and discusses its impact on the different layers of computer system hierarchy.

—Chris H. Kim, University of Minnesota

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Index Terms:
design and test, normally-off, instant-on, nonvolatile RAM (NVRAM), TMR device, spin-transfer torque, SPRAM, Gbit-scale memory, multibit operation, 4F2 memory cell
Citation:
Takayuki Kawahara, "Scalable Spin-Transfer Torque RAM Technology for Normally-Off Computing," IEEE Design & Test of Computers, vol. 28, no. 1, pp. 52-63, Jan.-Feb. 2011, doi:10.1109/MDT.2010.97
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