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Modeling, Architecture, and Applications for Emerging Memory Technologies
January/February 2011 (vol. 28 no. 1)
pp. 44-51
Yuan Xie, Pennsylvania State University

Editor's note:

Spin-transfer torque RAM and phase-change RAM are vying to become the next-generation embedded memory, offering high speed, high density, and nonvolatility. This article discusses new opportunities and challenges presented by these two memory technologies with a particular emphasis on modeling and architecture design.

—Chris H. Kim, University of Minnesota

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Index Terms:
design and test, memory technologies, memory hierarchy, nonvolatile memory, NVM, SRAM, eDRAM, RRAM, STT-RAM, PCRAM
Citation:
Yuan Xie, "Modeling, Architecture, and Applications for Emerging Memory Technologies," IEEE Design & Test of Computers, vol. 28, no. 1, pp. 44-51, Jan.-Feb. 2011, doi:10.1109/MDT.2011.20
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