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Device Model for Ballistic CNFETs Using the First Conducting Band
March-April 2008 (vol. 25 no. 2)
pp. 178-186
Hamidreza Hashempour, NXP Semiconductors
Fabrizio Lombardi, Northeastern University
This article presents an approximate model for the drain-source current of a carbon nanotube FET (CNFET) in the ballistic regime by using the first conducting band. The proposed model is symbolic in terms of carbon nanotube (CNT) features and presents a closed-form solution to the drain-source current as functions of parameters such as temperature, device terminal voltages, device geometry, Fermi levels, and CNT diameter. The model is analytic and particularly amenable to CAD tools for a fast, accurate calculation of the drain-source current in a CNFET. An evaluation of the model with respect to RMS errors (absolute and normalized) is presented. The ranges of normalized RMS errors are 2% to 7% for diameter variations of 3 nm to 0.5 nm, 2% to 5% for gate-source bias variations of 0 to supply, 5% to 6% for drain-source bias variations of 0 to supply, and 2% to 9% for Fermi-level variations of -0.2 eV to -0.8 eV. The execution of the model is at least 410 times faster than numerical models.

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Index Terms:
carbon nanotube, CNFET, charge density, self-consistent voltage, drain-source current, approximation, closed-form, CAD
Citation:
Hamidreza Hashempour, Fabrizio Lombardi, "Device Model for Ballistic CNFETs Using the First Conducting Band," IEEE Design & Test of Computers, vol. 25, no. 2, pp. 178-186, March-April 2008, doi:10.1109/MDT.2008.34
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