
This Article  
 
Share  
Bibliographic References  
Add to:  
Digg Furl Spurl Blink Simpy Del.icio.us Y!MyWeb  
Search  
 
ASCII Text  x  
Hamidreza Hashempour, Fabrizio Lombardi, "Device Model for Ballistic CNFETs Using the First Conducting Band," IEEE Design & Test of Computers, vol. 25, no. 2, pp. 178186, MarchApril, 2008.  
BibTex  x  
@article{ 10.1109/MDT.2008.34, author = {Hamidreza Hashempour and Fabrizio Lombardi}, title = {Device Model for Ballistic CNFETs Using the First Conducting Band}, journal ={IEEE Design & Test of Computers}, volume = {25}, number = {2}, issn = {07407475}, year = {2008}, pages = {178186}, doi = {http://doi.ieeecomputersociety.org/10.1109/MDT.2008.34}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, }  
RefWorks Procite/RefMan/Endnote  x  
TY  MGZN JO  IEEE Design & Test of Computers TI  Device Model for Ballistic CNFETs Using the First Conducting Band IS  2 SN  07407475 SP178 EP186 EPD  178186 A1  Hamidreza Hashempour, A1  Fabrizio Lombardi, PY  2008 KW  carbon nanotube KW  CNFET KW  charge density KW  selfconsistent voltage KW  drainsource current KW  approximation KW  closedform KW  CAD VL  25 JA  IEEE Design & Test of Computers ER   
1. S. Iijima, "Helical Microtubules of Graphitic Carbon," Nature, vol. 354, no. 6348, 7 Nov. 1991, pp. 5658.
2. S. Iijima and T. Ichihashi, "SingleShell Carbon Nanotubes of 1nm Diameter," Nature, vol. 363, no. 6430, 17 June 1993, pp. 603605.
3. B.C. Paul et al., "Modeling and Analysis of Circuit Performance of Ballistic CNFET," Proc. 43rd Design Automation Conf (DAC 06), ACM Press, 2006, pp. 717722.
4. S.J. Tans, A.R.M. Verschueren, and C. Dekker, "RoomTemperature Transistor Based on a Single Carbon Nanotube," Nature, vol. 393, no. 6680, 7 May 1998, pp. 4952.
5. P. Avouris et al., "Carbon Nanotube Electronics," Proc. IEEE, vol. 91, no. 11, Nov. 2003, pp. 17721784.
6. "FETToy," http:/www.nanohub.org.
7. A. Rahman et al., "Theory of Ballistic Nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, Sept. 2003, pp. 18531864.
8. H. Hashempour and F. Lombardi, "An Efficient and Symbolic Model for Charge Densities in Ballistic Carbon Nanotube FETs," Proc. 6th IEEE Conf. Nanotechnology (Nano 06), IEEE Press, vol. 1, 2006, pp. 2326.
1. J.W. Mintmire and C.T. White, "Universal Density of States for Carbon Nanotubes," Physical Rev. Letters, vol. 81, no. 12, Sept. 1998, pp. 25062509.
2. A. Javey et al., "Carbon Nanotube Transistor Array for Multistage Complementary Logic and Ring Oscillators," Nano Letters, vol. 2, no. 9, July 2002, pp. 929932.
3. R. Martel et al., "Single and MultiWall Carbon Nanotube FieldEffect Transistors," Applied Physics Letters, vol. 73, no. 17, 26 Oct. 1998, pp. 24472449.
4. J. Appenzeller et al., "Carbon Nanotube Electronics," IEEE Trans. Nanotechnology, vol. 1, no. 4, Dec. 2002, pp. 184189.
5. V. Derycke et al., "Carbon Nanotubes Inter and Intramolecular Logic Gates," Nano Letters, vol. 1, no. 9, Aug. 2001, pp. 453456.
6. A. Bachtold et al., "Logic Circuits with Carbon Nanotube Transistors," Science, vol. 294, no. 5545, Oct. 2001, pp. 13171320.
7. "FETToy," http:/www.nanohub.org.
8. A. Rahman et al., "Theory of Ballistic Nanotransistors," IEEE Trans. Electron Devices, vol. 50, no. 9, Sept. 2003, pp. 18531864.
9. P.L. McEuen, M.S. Fuhrer, and H. Park, "SingleWalled Carbon Nanotube Electronics," IEEE Trans. Nanotechnology, vol. 1, no. 1, Mar. 2002, pp. 7885.
10. B.C. Paul et al., "Modeling and Analysis of Circuit Performance of Ballistic CNFET," Proc. 43rd Design Automation Conf. (DAC 06), ACM Press, 2006, pp. 717722.
11. J. Deng and H.S.P. Wong, "A CircuitCompatible SPICE Model for Enhancement Mode Carbon Nanotube Field Effect Transistors," Proc. 11th Intl. Conf. Simulation of Semiconductor Processes and Devices (SISPAD 06), IEEE Press, 2006, pp. 166169.
12. G. Mugnaini and G. Iannaccone, "Analytical Model for Nanowire and Nanotube Transistors Covering Both Dissipative and Ballistic Transport," Proc. 35th European SolidState Device Research Conf. (ESSDERC 05), IEEE Press, 2005, pp. 213216.