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Issue No.04 - July/August (2007 vol.24)
pp: 322-330
Kyung Ki Kim , Northeastern University
Yong-Bin Kim , Northeastern University
Minsu Choi , University of Missouri-Rolla
Nohpill Park , Oklahoma State University, Stillwater
ABSTRACT
This article proposes a new heuristic approach to determine the input patterns that minimize leakage currents of nanometer CMOS circuits during sleep mode. The proposed approach uses a new macromodeling technique to characterize the minimum leakage current of each individual cell, considering fan-out effects, stack effect, and the interaction between gate-leakage and subthreshold currents. Experimental results shows that the methodology using the proposed macromodel provides less than a 4% error compared to Hspice simulation results.
INDEX TERMS
nanometer CMOS, cell characterization, leakage power, subthreshold leakage current, gate-tunneling current, input pattern generation
CITATION
Kyung Ki Kim, Yong-Bin Kim, Minsu Choi, Nohpill Park, "Leakage Minimization Technique for Nanoscale CMOS VLSI", IEEE Design & Test of Computers, vol.24, no. 4, pp. 322-330, July/August 2007, doi:10.1109/MDT.2007.141
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