|
| This Article | ||
| | ||
| Share | ||
| Bibliographic References | ||
| Add to: | ||
 Digg  Furl  Spurl  Blink  Simpy  Google  Del.icio.us  Y!MyWeb | ||
| Search | ||
| ||
November/December 2006 (vol. 23 no. 6)
pp. 436-437
| ASCII Text | x | ||
| T.M. Mak, Sani Nassif, "Guest Editors' Introduction: Process Variation and Stochastic Design and Test," IEEE Design & Test of Computers, vol. 23, no. 6, pp. 436-437, November/December, 2006. | |||
| BibTex | x | ||
| @article{ 10.1109/MDT.2006.147, author = {T.M. Mak and Sani Nassif}, title = {Guest Editors' Introduction: Process Variation and Stochastic Design and Test}, journal ={IEEE Design & Test of Computers}, volume = {23}, number = {6}, issn = {0740-7475}, year = {2006}, pages = {436-437}, doi = {http://doi.ieeecomputersociety.org/10.1109/MDT.2006.147}, publisher = {IEEE Computer Society}, address = {Los Alamitos, CA, USA}, } | |||
| RefWorks Procite/RefMan/Endnote | x | ||
| TY - MGZN JO - IEEE Design & Test of Computers TI - Guest Editors' Introduction: Process Variation and Stochastic Design and Test IS - 6 SN - 0740-7475 SP436 EP437 EPD - 436-437 A1 - T.M. Mak, A1 - Sani Nassif, PY - 2006 KW - process variation KW - subthreshold leakage KW - silicon manufacturing processes KW - process monitoring KW - adaptive circuits VL - 23 JA - IEEE Design & Test of Computers ER - | |||
DOI Bookmark: http://doi.ieeecomputersociety.org/10.1109/MDT.2006.147
As silicon manufacturing processes scale to and beyond the 65-nm node, process variations are consuming an increasingly larger portion of design and test budgets. Such variations play a significant part in subthreshold leakage and other important device performance metrics. The rise in inherent systematic and random nonuniformity as we scale our silicon devices to the level of atomic scaling will have far-reaching effects on every aspect of design, manufacturing, test, and overall reliability. This special issue explores this subject from different perspectives: process monitoring, testing, adaptive circuits, and architecture changes.
Index Terms:
process variation, subthreshold leakage, silicon manufacturing processes, process monitoring, adaptive circuits
Citation:
T.M. Mak, Sani Nassif, "Guest Editors' Introduction: Process Variation and Stochastic Design and Test," IEEE Design & Test of Computers, vol. 23, no. 6, pp. 436-437, Nov.-Dec. 2006, doi:10.1109/MDT.2006.147
Usage of this product signifies your acceptance of the Terms of Use.