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Issue No.04 - July/August (1986 vol.3)
pp: 56-64
Jerry Soden , Sandia National Laboratories
Charles Hawkins , University of New Mexico
ABSTRACT
Gate oxide shorts are defects that must be detected to produce high-reliability ICs. These problems will continue as devicesare scaled down and oxide thicknesses are reduced to the 100-? range. Complete detection of gate oxide shorts and other CMOSfailure mechanisms requires measuring the IDD current during the quiescent state after each test vector is applied to theIC. A 100-percent stuck-at fault test set is effective only if each test vector is accompanied by an IDD measurement. Thisarticle examines the need for a fast, sensitive method of measuring IDD during each test vector and discusses problems confrontingCMOS IC designers, test engineers and test instrumentation designers as they work to meet these demands.
INDEX TERMS
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CITATION
Jerry Soden, Charles Hawkins, "Test Considerations for Gate Oxide Shorts in CMOS ICs", IEEE Design & Test of Computers, vol.3, no. 4, pp. 56-64, July/August 1986, doi:10.1109/MDT.1986.294977
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