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Modeling Spin-Polarized Electron Transport in Semiconductors for Spintronics Applications
September/October 2007 (vol. 9 no. 5)
pp. 46-52
Šimon Kos, Los Alamos National Laboratory
Marina Hruška, Los Alamos National Laboratory
Scott A. Crooker, Los Alamos National Laboratory
Avadh Saxena, Los Alamos National Laboratory
Darryl L. Smith, Los Alamos National Laboratory
A primary goal in semiconductor spintronics is to develop a new generation of functional devices that exploit not only an electron's charge (as in today's electronics industry) but also its spin. The authors show how a system of coupled spin drift-diffusion equations can accurately model spin-polarized electron transport in semiconductors. Numerical solutions allow for direct and quantitative comparison with experimental imaging data.
Index Terms:
semiconductor spintronics, electron charge, electronic spin, numerical solution
Citation:
Šimon Kos, Marina Hruška, Scott A. Crooker, Avadh Saxena, Darryl L. Smith, "Modeling Spin-Polarized Electron Transport in Semiconductors for Spintronics Applications," Computing in Science and Engineering, vol. 9, no. 5, pp. 46-52, Sept.-Oct. 2007, doi:10.1109/MCSE.2007.104
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