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Bridging Time and Length Scales in Semiconductor Process Model Development
September/October 1999 (vol. 1 no. 5)
pp. 100-103
The development of new semiconductor-device materials is currently dominated by costly and time-consuming experimental investigations in which growth parameters are varied and correlated, ex situ, to device characteristics. Model-based process development has the potential to assist greatly in optimizing growth parameters and providing models suitable for use in in situ process control. Researchers have not used this approach, however, because robust, predictive models that describe the growth of semiconductor materials are neither well-developed nor validated. This situation is changing, however, due to the availability of high-resolution microscopy and improved modeling capabilities resulting from greatly increased computer power and more efficient numerical algorithms.
Citation:
Mark F. Gyure, "Bridging Time and Length Scales in Semiconductor Process Model Development," Computing in Science and Engineering, vol. 1, no. 5, pp. 100-103, Sept.-Oct. 1999, doi:10.1109/5992.790594
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