The Community for Technology Leaders
RSS Icon
Subscribe
Issue No.05 - September/October (1999 vol.1)
pp: 100-103
ABSTRACT
The development of new semiconductor-device materials is currently dominated by costly and time-consuming experimental investigations in which growth parameters are varied and correlated, ex situ, to device characteristics. Model-based process development has the potential to assist greatly in optimizing growth parameters and providing models suitable for use in in situ process control. Researchers have not used this approach, however, because robust, predictive models that describe the growth of semiconductor materials are neither well-developed nor validated. This situation is changing, however, due to the availability of high-resolution microscopy and improved modeling capabilities resulting from greatly increased computer power and more efficient numerical algorithms.
CITATION
Mark F. Gyure, "Bridging Time and Length Scales in Semiconductor Process Model Development", Computing in Science & Engineering, vol.1, no. 5, pp. 100-103, September/October 1999, doi:10.1109/5992.790594
20 ms
(Ver 2.0)

Marketing Automation Platform Marketing Automation Tool