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Issue No.02 - February (1976 vol.9)
pp: 31-37
ABSTRACT
During the last decade we have seen a dramatic increase in the complexity of silicon integrated circuit chips, particularly in memory. The n-channel FET technology is dominant in main memory and in lower performance logic and arrays (i.e., read-only memory and buffers) because of its higher circuit density and simpler processing, whereas bipolar transistor technology dominates for high-performance logic and arrays.
INDEX TERMS
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CITATION
D.L. Critchlow, "High Speed MOSFET Circuits Using Advanced Lithography", Computer, vol.9, no. 2, pp. 31-37, February 1976, doi:10.1109/C-M.1976.218503
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